| US 7,553,685 B2 | ||
| Method of fabricating light-emitting device and light-emitting device | ||
| Nobuhiko Noto, Annaka (Japan); Masato Yamada, Annaka (Japan); Shinji Nozaki, Kawasaki (Japan); Kazuo Uchida, Tokyo (Japan); and Hiroshi Morisaki, Tsurugashima (Japan) | ||
| Assigned to Shin-Etsu Handotai Co., Ltd., Tokyo (Japan) | ||
| Appl. No. 10/523,636 PCT Filed Aug. 06, 2003, PCT No. PCT/JP03/09979 § 371(c)(1), (2), (4) Date Feb. 04, 2005, PCT Pub. No. WO2004/015785, PCT Pub. Date Feb. 19, 2004. |
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| Claims priority of application No. 2002-230343 (JP), filed on Aug. 07, 2002. | ||
| Prior Publication US 2005/0285127 A1, Dec. 29, 2005 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—46 [257/96] | 18 Claims |
| 1. A method of fabricating a light-emitting device having a light-emitting layer section configured as having a double heterostructure
in which a first conductivity type cladding layer, an active layer, and a second conductivity type cladding layer, all of
which being composed of (AlxGa1-x)yIn1-yP (where, 0≤x≤1, 0≤y≤1), are stacked in this order, and further comprising an ITO transparent electrode layer applying drive
voltage for light-emission to the light-emitting layer section on at least either side of the first conductivity type cladding
layer and the second conductivity type cladding layer, comprising the steps of:
forming a GaAs layer on the light-emitting layer section;
forming the ITO transparent electrode layer so as to contact with the GaAs layer to form a stack including the GaAs layer
and the ITO transparent electrode layer; and
annealing the stack so as to allow In to diffuse from the ITO transparent electrode layer into the GaAs layer to thereby convert
it into a contact layer composed of In-containing GaAs,
wherein the annealing is carried out so as to adjust a mean In concentration of the contact layer within a range from 0.1
to 0.6 on the basis of atomic ratio of In to the total concentration of In and Ga,
wherein the annealing is carried out so as to adjust CB/CA to 0.8 or below, where CA is In concentration at a boundary position between the contact layer and the ITO transparent electrode layer, and CB is In concentration at a boundary position on the opposite side, and
wherein the light-emitting layer section is configured using (AlxGa1-x)yIn1-yP (where, 0≤x≤1, 0.45≤y≤0.55) to ensure lattice matching between the GaAs layer and the light-emitting layer section.
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