| US 7,552,524 B2 | ||
| Method for preventing TMR MRR drop of a slider | ||
| Hongtao Ma, DongGuan (China); Hongxin Fang, DongGuan (China); and Baohua Chen, DongGuan (China) | ||
| Assigned to Sae Magnetics (H.K.) Ltd., Hong Kong (China) | ||
| Filed on May 16, 2006, as Appl. No. 11/434,518. | ||
| Prior Publication US 2008/0000075 A1, Jan. 03, 2008 | ||
| Int. Cl. G11B 5/127 (2006.01); H04R 31/00 (2006.01) | ||
| U.S. Cl. 29—603.16 [29/603.07; 29/603.12; 29/603.13; 29/603.15; 29/603.18; 360/235.7; 360/235.8; 360/236.3; 360/236.5; 360/237] | 3 Claims |
| 1. A method for reducing TMR (tunnel magneto-resistance) MRR (magneto-resistance resistance) drop of a slider, the method
comprising:
positioning a row bar constructed by a plurality of slider structural bodies on a tray, each slider structural body having
a pole tip with a TMR element;
loading the tray into a processing chamber and evacuating the processing chamber to a preset pressure;
introducing a processing gas containing oxygen gas into the processing chamber;
exposing the slider structural bodies to an etching means in the atmosphere of the processing gas to oxidize two metal layers
of the TMR element to form an oxidation layer directly thereon;
forming a silicon layer on the oxidation layer; and
forming a diamond-like carbon layer on the silicon layer.
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