US 11,683,599 B2
Image sensors and electronic devices
Gae Hwang Lee, Seongnam-si (KR); Kwang Hee Lee, Hwaseong-si (KR); Kyung Bae Park, Hwaseong-si (KR); Sung Young Yun, Suwon-si (KR); Dong-Seok Leem, Hwaseong-si (KR); and Yong Wan Jin, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Apr. 12, 2021, as Appl. No. 17/227,676.
Application 17/227,676 is a continuation of application No. 16/182,037, filed on Nov. 6, 2018, granted, now 10,979,680, issued on Apr. 13, 2021.
Claims priority of application No. 10-2018-0053160 (KR), filed on May 9, 2018.
Prior Publication US 2021/0235046 A1, Jul. 29, 2021
Int. Cl. H04N 25/79 (2023.01); H04N 25/17 (2023.01); H04N 5/32 (2023.01); H01L 27/146 (2006.01)
CPC H04N 25/17 (2023.01) [H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14629 (2013.01); H04N 5/32 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An image sensor, comprising:
a photoelectric device on a semiconductor substrate, the photoelectric device including
a first electrode and a second electrode facing each other, wherein one of the first electrode or the second electrode is an anode and another one of the first electrode or the second electrode is a cathode, wherein each of the first electrode and the second electrode is a light-transmitting electrode that includes one of
a transparent conductor, or
a metal thin layer, or
a metal thin layer doped with a metal oxide, and
an active layer between the first electrode and the second electrode, the active layer configured to selectively absorb light associated with a first wavelength spectrum to generate excitons that are separated into holes and electrons and to cause a photoelectric effect to be generated based on the separated holes being transferred to the anode and the separated electrons being transferred to the cathode, the first wavelength spectrum associated with a first color of three primary colors;
a first photo-sensing device stacked with the photoelectric device such that the photoelectric device overlaps the first photo-sensing device in a vertical direction extending orthogonally with an upper surface of the semiconductor substrate, the first photo-sensing device configured to sense light associated with a second wavelength spectrum, the second wavelength spectrum associated with a second color of the three primary colors;
a second photo-sensing device stacked with the photoelectric device such that the photoelectric device overlaps the second photo-sensing device in the vertical direction, the second photo-sensing device configured to sense light associated with a third wavelength spectrum, the third wavelength spectrum associated with a third color of the three primary colors;
a first color filter between the photoelectric device and the first photo-sensing device in the vertical direction and configured to selectively transmit light associated with the second wavelength spectrum;
a second color filter between the photoelectric device and the second photo-sensing device in the vertical direction and configured to selectively transmit light associated with the first wavelength spectrum and the third wavelength spectrum; and
a first insulating layer between the photoelectric device and the second photo-sensing device in the vertical direction and configured to selectively reflect light of wavelength spectra except for light associated with the third wavelength spectrum.