US 11,682,707 B2
Contact formation method and related structure
Lin-Yu Huang, Hsinchu (TW); Li-Zhen Yu, New Taipei (TW); Chia-Hao Chang, Hsinchu (TW); Cheng-Chi Chuang, New Taipei (TW); Kuan-Lun Cheng, Hsin-Chu (TW); and Chih-Hao Wang, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Sep. 30, 2020, as Appl. No. 16/948,745.
Claims priority of provisional application 63/002,781, filed on Mar. 31, 2020.
Prior Publication US 2021/0305382 A1, Sep. 30, 2021
Int. Cl. H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 21/8234 (2006.01); H01L 29/51 (2006.01)
CPC H01L 29/41775 (2013.01) [H01L 21/28114 (2013.01); H01L 21/823468 (2013.01); H01L 21/823475 (2013.01); H01L 29/4175 (2013.01); H01L 29/42376 (2013.01); H01L 29/6653 (2013.01); H01L 29/517 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a metal gate structure having sidewall spacers disposed on sidewalls of the metal gate structure;
a metal cap layer disposed over and in contact with the metal gate structure, wherein a first width of a bottom portion of the metal cap layer is greater than a second width of a top portion of the metal cap layer;
a dielectric material disposed on either side of the metal cap layer, wherein the sidewall spacers and a portion of the metal gate structure are disposed beneath the dielectric material; and
an inter-layer dielectric (ILD) layer disposed adjacent to the metal gate structure, wherein a first lateral surface of the ILD layer contacts a second lateral surface of a sidewall spacer that is disposed along a sidewall of the metal gate structure;
wherein a top surface of the metal gate structure and a top surface of the sidewall spacers are both recessed with respect to a top surface of the ILD layer.