US 11,682,705 B2
Thin film transistor substrate
Chan Woo Yang, Siheung-si (KR); Hyune Ok Shin, Gwacheon-si (KR); Chang Oh Jeong, Suwon-si (KR); Su Kyoung Yang, Yongin-si (KR); and Dong Min Lee, Anyang-si (KR)
Assigned to Samsung Display Co., Ltd., Yongin-si (KR)
Filed by Samsung Display Co., Ltd., Yongin-si (KR)
Filed on Nov. 4, 2020, as Appl. No. 17/88,779.
Application 17/088,779 is a division of application No. 16/192,802, filed on Nov. 16, 2018, granted, now 10,861,949.
Application 16/192,802 is a division of application No. 14/691,092, filed on Apr. 20, 2015, granted, now 10,134,855, issued on Nov. 20, 2018.
Claims priority of application No. 10-2014-0161644 (KR), filed on Nov. 19, 2014.
Prior Publication US 2021/0057532 A1, Feb. 25, 2021
Int. Cl. H01L 29/417 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/24 (2006.01); H01L 29/45 (2006.01); C22C 29/12 (2006.01)
CPC H01L 29/41733 (2013.01) [H01L 27/1225 (2013.01); H01L 29/24 (2013.01); H01L 29/45 (2013.01); H01L 29/7869 (2013.01); C22C 29/12 (2013.01)] 3 Claims
OG exemplary drawing
 
1. A thin film transistor substrate, comprising:
a semiconductor layer; and
source and drain electrodes comprising a metal layer and a barrier layer, the barrier layer interposed between the metal layer and the semiconductor layer and comprising a metal oxide having a crystal size in a c-axis direction between 67 Å and 144 Å,
wherein:
the source and drain electrodes further comprise a capping layer comprising a metal oxide having a crystal size in a c-axis direction between 67.5 Å and 108 Å, the capping layer disposed on the metal layer;
each of the capping layer and the barrier layer comprises one of a bare zinc oxide (ZnO) layer, a gallium-zinc oxide (GZO) layer, an aluminum-zinc oxide (AZO) layer, and an indium-zinc oxide (IZO) layer;
when the capping layer comprises the gallium-zinc oxide (GZO) layer, the gallium-zinc oxide (GZO) layer comprises zinc oxide (ZnO) between 70 weight % and 85 weight % and gallium (Ga) between 15 weight % and 30 weight %,
when the capping layer comprises the aluminum-zinc oxide (AZO) layer, the aluminum-zinc oxide (AZO) layer comprises zinc oxide (ZnO) between 70 weight % and 85 weight % and aluminum (Al) between 15 weight % and 30 weight %, and
when the capping layer comprises the indium-zinc oxide (IZO) layer, the indium-zinc oxide (IZO) layer comprises zinc oxide (ZnO) between 70 weight % and 85 weight % and indium (In) between 15 weight % and 30 weight %.