US 11,682,686 B2
Photoelectric conversion apparatus and equipment including the same
Toshiyuki Ogawa, Abiko (JP); Sho Suzuki, Machida (JP); Takehito Okabe, Yokohama (JP); Mitsuhiro Yomori, Tama (JP); Yukinobu Suzuki, Koza-gun (JP); Akihiro Kawano, Yokohama (JP); and Tsutomu Tange, Yokohama (JP)
Assigned to Canon Kabushiki Kaisha, Tokyo (JP)
Filed by CANON KABUSHIKI KAISHA, Tokyo (JP)
Filed on Dec. 22, 2021, as Appl. No. 17/558,814.
Application 17/558,814 is a division of application No. 16/600,753, filed on Oct. 14, 2019, granted, now 11,244,978.
Claims priority of application No. JP2018-196075 (JP), filed on Oct. 17, 2018; application No. JP2019-025790 (JP), filed on Feb. 15, 2019; application No. JP2019-036672 (JP), filed on Feb. 28, 2019; and application No. JP2019-126403 (JP), filed on Jul. 5, 2019.
Prior Publication US 2022/0115429 A1, Apr. 14, 2022
Int. Cl. H01L 27/146 (2006.01); H04N 5/369 (2011.01); H04N 25/70 (2023.01)
CPC H01L 27/14623 (2013.01) [H01L 27/14627 (2013.01); H01L 27/14685 (2013.01); H04N 25/70 (2023.01); H01L 27/1464 (2013.01); H01L 27/1469 (2013.01); H01L 27/14634 (2013.01)] 26 Claims
OG exemplary drawing
 
1. A photoelectric conversion apparatus including a light-receiving region and a light-shielded region, comprising:
a semiconductor layer in which a plurality of first photoelectric converters are arranged in the light-receiving region and a plurality of second photoelectric converters are arranged in the light-shielded region;
a light-shielding wall arranged above the semiconductor layer and configured to define a plurality of apertures respectively corresponding to the plurality of first photoelectric converters; and
a light-shielding film arranged above the semiconductor layer,
the light-shielding film including a first portion extending along a principal surface of the semiconductor layer to cover the plurality of second photoelectric converters, the first portion having a lower surface on a side of the semiconductor layer and an upper surface on an opposite side of the lower surface, and
the light-shielding wall including a second portion whose distance from the semiconductor layer is larger than a distance between the upper surface and the principal surface,
the light-shielding film defining a plurality of openings corresponding to the plurality of first photoelectric converters, and has a third portion positioned between the second portion and the semiconductor layer,
wherein a thickness of the first portion in a direction perpendicular to the principal surface is larger than a thickness of the second portion in a direction parallel to the principal surface and a thickness of the third portion in the direction perpendicular to the principal surface is larger than a thickness of the second portion in the direction parallel to the principal surface, and
wherein the thickness of the second portion in the direction parallel to the principal surface is defined by the thickest part of the second portion.