US 11,682,660 B2
Semiconductor structure
Yuanhao Yu, Kaohsiung (TW); Chun Chen Chen, Kaohsiung (TW); and Shang Chien Chen, Kaohsiung (TW)
Assigned to ADVANCED SEMICONDUCTOR ENGINEERING, INC., Kaohsiung (TW)
Filed by Advanced Semiconductor Engineering, Inc., Kaohsiung (TW)
Filed on Oct. 21, 2020, as Appl. No. 17/76,480.
Prior Publication US 2022/0122950 A1, Apr. 21, 2022
Int. Cl. H01L 25/10 (2006.01); H01L 25/18 (2023.01); G06F 3/0354 (2013.01)
CPC H01L 25/105 (2013.01) [H01L 25/18 (2013.01); G06F 3/03545 (2013.01); H01L 2225/107 (2013.01); H01L 2225/1058 (2013.01); H01L 2225/1076 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a first substrate having a first surface;
a first semiconductor device package disposed on the first surface of the first substrate, wherein the first semiconductor device package includes a second substrate, a first conductive element disposed over the second substrate, and a second conductive element disposed over the second substrate;
a second semiconductor device package disposed on the first surface of the first substrate,
a first transmission path electrically connecting the first semiconductor device package and second semiconductor device package through the first substrate; and
a second transmission path electrically connecting the first semiconductor device package and second semiconductor device package, wherein the second transmission path is outside the first substrate;
wherein the first substrate includes a common contact within the first transmission path and the first conductive element of the first semiconductor device package is in contact with the common contact of the first substrate,
wherein the second conductive element of the first semiconductor device package is within the second transmission path, and
wherein a diameter of the first conductive element of the first semiconductor device package is greater than a diameter of the second conductive element of the first semiconductor device package.