US 11,682,626 B2
Chamfered die of semiconductor package and method for forming the same
Chen-Hua Yu, Hsinchu (TW); Wei-Kang Hsieh, Hsinchu (TW); Shih-Wei Chen, Hsinchu (TW); Tin-Hao Kuo, Hsinchu (TW); and Hao-Yi Tsai, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 10, 2020, as Appl. No. 16/926,215.
Claims priority of provisional application 62/967,245, filed on Jan. 29, 2020.
Prior Publication US 2021/0233852 A1, Jul. 29, 2021
Int. Cl. H01L 23/40 (2006.01); H01L 23/538 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 21/768 (2006.01); H01L 25/065 (2023.01); H01L 21/56 (2006.01); H01L 23/367 (2006.01)
CPC H01L 23/5384 (2013.01) [H01L 21/56 (2013.01); H01L 21/76802 (2013.01); H01L 23/31 (2013.01); H01L 23/367 (2013.01); H01L 23/4006 (2013.01); H01L 23/4012 (2013.01); H01L 23/5385 (2013.01); H01L 24/14 (2013.01); H01L 25/0657 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first die, the first die comprising a chamfered corner and a seal ring, the seal ring of the first die being along the chamfered corner;
an encapsulant over a front-side surface of the first die, the encapsulant at least partially surrounding the first die;
a redistribution structure on the encapsulant;
a thermal interface material on a back-side surface of the first die, the back-side surface being opposite the front-side surface;
a thermal module thermally and physically coupled to the back-side surface of the first die with the thermal interface material; and
a bolt extending through the redistribution structure and the thermal module, the bolt being adjacent to the chamfered corner.