CPC H01L 23/53209 (2013.01) [H01L 21/3212 (2013.01); H01L 21/76802 (2013.01); H01L 21/76843 (2013.01); H01L 23/5226 (2013.01)] | 20 Claims |
1. A structure comprising:
an interconnect-level dielectric layer comprising a dielectric material and overlying a substrate; and
a metal interconnect structure embedded in the interconnect-level dielectric layer and including a graded metallic alloy layer and a metallic fill material portion,
wherein:
the graded metallic alloy layer includes a graded metallic alloy consisting essentially of a binary alloy of a first elemental metal and a second elemental metal that is different from the first elemental metal and is different from any element within the metallic fill material portion; and
an atomic concentration of the second elemental metal increases with a distance from an interface between the graded metallic alloy and the interconnect-level dielectric layer, and is non-zero at the interface between the graded metallic alloy and the interconnect-level dielectric layer.
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