US 11,682,620 B2
Graded metallic liner for metal interconnect structures and methods for forming the same
Shu-Wei Li, Hsinchu (TW); Guanyu Luo, Hsinchu (TW); Shin-Yi Yang, Taipei (TW); and Ming-Han Lee, New Taipei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on Mar. 18, 2021, as Appl. No. 17/205,184.
Prior Publication US 2022/0302039 A1, Sep. 22, 2022
Int. Cl. H01L 23/532 (2006.01); H01L 23/522 (2006.01); H01L 21/321 (2006.01); H01L 21/768 (2006.01)
CPC H01L 23/53209 (2013.01) [H01L 21/3212 (2013.01); H01L 21/76802 (2013.01); H01L 21/76843 (2013.01); H01L 23/5226 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure comprising:
an interconnect-level dielectric layer comprising a dielectric material and overlying a substrate; and
a metal interconnect structure embedded in the interconnect-level dielectric layer and including a graded metallic alloy layer and a metallic fill material portion,
wherein:
the graded metallic alloy layer includes a graded metallic alloy consisting essentially of a binary alloy of a first elemental metal and a second elemental metal that is different from the first elemental metal and is different from any element within the metallic fill material portion; and
an atomic concentration of the second elemental metal increases with a distance from an interface between the graded metallic alloy and the interconnect-level dielectric layer, and is non-zero at the interface between the graded metallic alloy and the interconnect-level dielectric layer.