US 11,682,594 B2
Semiconductor structure including interconnection to probe pad with probe mark
Hsien-Wei Chen, Hsinchu (TW); Ching-Jung Yang, Taoyuan (TW); and Jie Chen, New Taipei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Apr. 14, 2022, as Appl. No. 17/721,326.
Application 17/721,326 is a continuation of application No. 17/133,665, filed on Dec. 24, 2020, granted, now 11,335,610.
Application 17/133,665 is a continuation of application No. 16/440,998, filed on Jun. 14, 2019, granted, now 10,879,138, issued on Dec. 29, 2020.
Prior Publication US 2022/0238397 A1, Jul. 28, 2022
Int. Cl. H01L 21/66 (2006.01); H01L 23/00 (2006.01); H01L 23/544 (2006.01)
CPC H01L 22/32 (2013.01) [H01L 22/20 (2013.01); H01L 23/544 (2013.01); H01L 24/03 (2013.01); H01L 24/08 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
an interconnect structure, disposed over a substrate;
a pad structure, disposed over and electrically connected to the interconnect structure, wherein the pad structure comprises a metal pad and a dielectric cap on the metal pad, and the pad structure has a probe mark recessed from a top surface of the dielectric cap into a top surface of the metal pad;
a protective layer, conformally covering the top surface of the dielectric cap and the probe mark; and
a bonding structure, disposed over the protective layer, wherein the bonding structure comprises:
a bonding dielectric layer at least comprising a first bonding dielectric material and a second bonding dielectric material on the first bonding dielectric material; and
a first bonding metal layer disposed in the bonding dielectric layer and penetrating through the protective layer and the dielectric cap to contact the metal pad.