CPC H01L 22/32 (2013.01) [G01R 1/07378 (2013.01); H01L 21/486 (2013.01); H01L 21/4853 (2013.01); H01L 22/30 (2013.01); H01L 22/34 (2013.01); H01L 23/49811 (2013.01); H01L 23/49822 (2013.01); H01L 23/49827 (2013.01); H01L 23/49838 (2013.01); H01L 23/5226 (2013.01); H01L 23/585 (2013.01); H01L 21/561 (2013.01); H01L 21/6835 (2013.01); H01L 2221/68331 (2013.01); H01L 2224/05001 (2013.01); H01L 2224/056 (2013.01); H01L 2224/05026 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/81192 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/97 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/15311 (2013.01)] | 20 Claims |
1. A semiconductor device comprising:
an integrated circuit die, the integrated circuit die comprising a plurality of die contact pads and a plurality of die interconnects, each of the plurality of die interconnects electrically coupling two of the plurality of die contact pads to each other; and
an interposer bonded to the integrated circuit die, the interposer comprising a plurality of interposer contact pads, a plurality of interposer interconnects, a first test connection, and a second test connection, wherein:
each of the plurality of interposer interconnects electrically couple two of the plurality of interposer contact pads to each other;
each of the plurality of interposer contact pads are coupled to corresponding ones of the plurality of die contact pads; and
the plurality of interposer interconnects, the plurality of interposer contact pads, the plurality of die contact pads, and the plurality of die interconnects form a daisy chain electrically interposed between the first test connection and the second test connection.
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