US 11,682,589 B2
CMOS finFET structures including work-function materials having different proportions of crystalline orientations and methods of forming the same
Ya-Wen Chiu, Tainan (TW); Da-Yuan Lee, Jhubei (TW); Hsien-Ming Lee, Changhua (TW); Kai-Cyuan Yang, Tainan (TW); Yu-Sheng Wang, Tainan (TW); Chih-Hsiang Fan, Hsinchu (TW); and Kun-Wa Kuok, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Oct. 12, 2020, as Appl. No. 17/68,041.
Application 17/068,041 is a division of application No. 15/803,486, filed on Nov. 3, 2017, granted, now 10,804,161.
Claims priority of provisional application 62/434,958, filed on Dec. 15, 2016.
Prior Publication US 2021/0043521 A1, Feb. 11, 2021
Int. Cl. H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/51 (2006.01)
CPC H01L 21/823821 (2013.01) [H01L 21/823814 (2013.01); H01L 21/823828 (2013.01); H01L 27/0924 (2013.01); H01L 29/4966 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 21/823842 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
an n-type transistor comprising:
a first fin extending from a substrate;
a first gate dielectric layer over the first fin; and
a first work-function layer over the first gate dielectric layer, wherein the first work-function layer directly contacts the first gate dielectric layer; and
a p-type transistor comprising:
a second fin extending from the substrate;
a second gate dielectric layer over the second fin; and
a second work-function layer over the second gate dielectric layer, wherein the second work-function layer directly contacts the second gate dielectric layer, wherein the first work-function layer and the second work-function layer comprise a first work-function material, and wherein the first work-function layer has a first proportion of a first crystalline orientation and the second work-function layer has a second proportion of the first crystalline orientation different than the first proportion of the first crystalline orientation.