US 11,682,583 B2
Through-vias and methods of forming the same
Chung-Hao Tsai, Huatan Township (TW); En-Hsiang Yeh, Hsinchu (TW); and Chuei-Tang Wang, Taichung (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Dec. 11, 2018, as Appl. No. 16/215,792.
Application 14/491,422 is a division of application No. 13/762,248, filed on Feb. 7, 2013, granted, now 8,916,979, issued on Dec. 23, 2014.
Application 16/215,792 is a continuation of application No. 14/491,422, filed on Sep. 19, 2014, granted, now 10,157,791.
Claims priority of provisional application 61/746,720, filed on Dec. 28, 2012.
Prior Publication US 2019/0115258 A1, Apr. 18, 2019
Int. Cl. H01L 21/768 (2006.01); H01L 23/48 (2006.01)
CPC H01L 21/76898 (2013.01) [H01L 21/76831 (2013.01); H01L 21/76877 (2013.01); H01L 23/481 (2013.01); H01L 2224/13 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
forming a first through-via extending from a first side of a semiconductor substrate into the semiconductor substrate, wherein the semiconductor substrate comprises a first surface on the first side;
polishing the semiconductor substrate so that a second surface of the semiconductor substrate is formed, with the second surface being opposite to the first surface, wherein the semiconductor substrate comprises a semiconductor material continuously extends from the first surface to the second surface, and wherein after the polishing, the first through-via is revealed through the second surface;
etching the semiconductor substrate from a second side of the semiconductor substrate to form a first through-opening, wherein the first side and the second side are opposite sides of the semiconductor substrate;
filling the first through-opening with a dielectric material to form a dielectric region; and
forming a second through-via penetrating through the dielectric region.