CPC H01L 21/02527 (2013.01) [C23C 16/02 (2013.01); C23C 16/26 (2013.01); H01L 21/0262 (2013.01); H01L 21/02425 (2013.01); H01L 21/02488 (2013.01)] | 10 Claims |
1. A method of improving graphene deposition, the method comprising:
exposing a substrate surface comprising a dielectric material to an oxygenating plasma to increase smoothness of the substrate surface, decrease hydrogen concentration on the substrate surface, or decrease contamination on the substrate surface, the dielectric material comprising one or more of silicon, silicon nitride or glass; and
exposing the substrate surface to a microwave surface-wave plasma comprising hydrocarbon and hydrogen radicals to form an improved graphene layer.
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