US 11,682,556 B2
Methods of improving graphene deposition for processes using microwave surface-wave plasma on dielectric materials
Jie Zhou, San Jose, CA (US); Erica Chen, Cupertino, CA (US); Qiwei Liang, Fremont, CA (US); Chentsau Chris Ying, Cupertino, CA (US); Srinivas D. Nemani, Sunnyvale, CA (US); and Ellie Y. Yieh, San Jose, CA (US)
Assigned to APPLIED MATERIALS, INC., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Feb. 15, 2022, as Appl. No. 17/672,305.
Application 17/672,305 is a division of application No. 16/585,929, filed on Sep. 27, 2019, granted, now 11,289,331.
Claims priority of provisional application 62/737,868, filed on Sep. 27, 2018.
Prior Publication US 2022/0172948 A1, Jun. 2, 2022
Int. Cl. H01L 21/02 (2006.01); C23C 16/02 (2006.01); C23C 16/26 (2006.01)
CPC H01L 21/02527 (2013.01) [C23C 16/02 (2013.01); C23C 16/26 (2013.01); H01L 21/0262 (2013.01); H01L 21/02425 (2013.01); H01L 21/02488 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A method of improving graphene deposition, the method comprising:
exposing a substrate surface comprising a dielectric material to an oxygenating plasma to increase smoothness of the substrate surface, decrease hydrogen concentration on the substrate surface, or decrease contamination on the substrate surface, the dielectric material comprising one or more of silicon, silicon nitride or glass; and
exposing the substrate surface to a microwave surface-wave plasma comprising hydrocarbon and hydrogen radicals to form an improved graphene layer.