US 11,682,542 B2
Plasma processing device
Tooru Aramaki, Tokyo (JP); Kenetsu Yokogawa, Tokyo (JP); and Masaru Izawa, Tokyo (JP)
Assigned to HITACHI HIGH-TECH CORPORATION, Tokyo (JP)
Filed by HITACHI HIGH-TECH CORPORATION, Tokyo (JP)
Filed on Feb. 3, 2021, as Appl. No. 17/166,066.
Application 17/166,066 is a continuation of application No. 15/204,183, filed on Jul. 7, 2016, granted, now 10,930,476.
Claims priority of application No. 2015-137389 (JP), filed on Jul. 9, 2015.
Prior Publication US 2021/0159055 A1, May 27, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01J 37/32 (2006.01); C23C 16/46 (2006.01); C23C 16/458 (2006.01); C23C 16/511 (2006.01)
CPC H01J 37/32532 (2013.01) [C23C 16/4586 (2013.01); C23C 16/46 (2013.01); C23C 16/463 (2013.01); C23C 16/511 (2013.01); H01J 37/32009 (2013.01); H01J 37/32192 (2013.01); H01J 37/32522 (2013.01); H01J 37/32715 (2013.01); H01J 37/32724 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A plasma processing apparatus comprising:
a processing chamber which is disposed in a vacuum vessel and is decompressed internally and a plasma is generated using a process gas supplied therein;
a sample stage which is disposed in the processing chamber and on which a sample to be processed by using the plasma is located and held, the sample stage including a metallic base which has a cap-shaped structure including at least one of recesses disposed on a lower surface of the metallic base and a cooling plate which is disposed below the metallic base and connected with the cap-shaped structure, the cooling plate including a medium flow channel and a dielectric film which is disposed on an upper surface of the metallic base and includes a conductive film disposed internally therein;
a first power supply configured to supply high-frequency power to the conductive film;
at least one aggregation of a plurality of Peltier elements which are connected in series and housed inside at least one of spaces in the metallic base which are maintained in an atmospheric pressure and constituted by the at least one of recesses of the metallic base in the cap-shaped structure and the cooling plate which are connected to each other, each of the plurality of Peltier elements being configured to have both heat generating and cooling functions; and
a temperature sensor which is disposed inside the at least one of spaces in the metallic base between the at least one aggregation of a plurality of Peltier elements and a ceiling of the at least one of spaces in the metallic base in which the at least one aggregation of a plurality of Peltier elements are housed,
wherein the at least one aggregation of a plurality of Peltier elements are surrounded by the cap-shaped structure and the cooling plate and equipped in the at least one of spaces in the metallic base and separated from the conductive film by the dielectric film, and the metallic base is connected to ground potential.