US 11,682,540 B2
Ion implantation system with mixture of arc chamber materials
Ying Tang, Brookfield, CT (US); Sharad N. Yedave, Danbury, CT (US); Joseph R. Despres, Middletown, CT (US); Joseph D. Sweeney, New Milford, CT (US); and Oleg Byl, Southbury, CT (US)
Assigned to ENTEGRIS, INC., Billerica, MA (US)
Filed by Entegris, Inc., Billerica, MA (US)
Filed on Sep. 3, 2021, as Appl. No. 17/466,362.
Application 17/466,362 is a continuation of application No. 16/904,286, filed on Jun. 17, 2020, granted, now 11,139,145.
Claims priority of provisional application 62/875,869, filed on Jul. 18, 2019.
Prior Publication US 2021/0398773 A1, Dec. 23, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. H01J 37/317 (2006.01); H01J 37/08 (2006.01)
CPC H01J 37/3171 (2013.01) [H01J 37/08 (2013.01)] 16 Claims
OG exemplary drawing
 
1. An ion implantation system for implanting one or more ionic species into a substrate, the system comprising:
a gas source comprising an ionizable gas or gas mixture containing at least one ionizable gas, wherein the ionizable gas or gas mixture includes one or more of the SiF4, Si2F6, Si2H4, SiHF3, SiH2F2, SiH3F, Si2H3F3, Si2H5F, Si2HF5, BF3, B2F4, B2H6, BHF, BHF2, enriched BF3, GeF4, Ge2F6, GeH4, enriched GeF4, GeHF3, GeH2F2, GeH3F, PF3, PF5, PH3, PHF2, PH2F, PH3F2, P2HF, AsHF2, AsH2F, AsH3F2, AsF3, AsF5, AsH3, SbF5, WF6, NF3, N2F4, NH3, NHF2, NH2F, NHF, and N2H3F, CO, COF2, CH4, CF4, C2F6 and gases having the following general formula CnHxF2n+2−x, CnHxF2n−x, CnHxF2n−2−; and
an arc chamber comprising at least a first arc chamber material and a second arc chamber material, wherein the first and second arc chamber materials are different,
wherein the arc chamber comprises arc chamber walls having interior-plasma facing surfaces and at least one or more arc chamber liners, a sputtering target disposed in the arc chamber, or a combination thereof, wherein the first and second arc chamber materials are present in the arc chamber walls, in the one or more arc chamber liners disposed in the arc chamber, a target disposed in the arc chamber, or a combination thereof.