US 11,682,514 B2
Memory cell having a free ferromagnetic material layer with a curved, non-planar surface and methods of making such memory cells
Hemant Dixit, Halfmoon, NY (US); Vinayak Bharat Naik, Singapore (SG); and Kazutaka Yamane, Singapore (SG)
Assigned to GlobalFoundries U.S. Inc., Santa Clara, CA (US)
Filed by GLOBALFOUNDRIES U.S. Inc., Santa Clara, CA (US)
Filed on Aug. 19, 2020, as Appl. No. 16/997,065.
Prior Publication US 2022/0059754 A1, Feb. 24, 2022
Int. Cl. H01F 10/32 (2006.01); H10B 61/00 (2023.01); H10N 50/80 (2023.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10N 50/85 (2023.01)
CPC H01F 10/3254 (2013.01) [H01F 10/329 (2013.01); H01F 10/3286 (2013.01); H10B 61/00 (2023.02); H10B 61/22 (2023.02); H10N 50/01 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a bottom electrode on a conductive structure, the bottom electrode having a curved bottom surface conductively coupled to a curved upper surface of the conductive structure;
a top electrode above the bottom electrode; and
an MTJ (Magnetic Tunnel Junction) structure above the bottom electrode and below the top electrode, wherein the MTJ structure comprises:
a first ferromagnetic material layer above the bottom electrode;
a non-magnetic insulation layer above the first ferromagnetic material layer;
a second ferromagnetic material layer on the non-magnetic insulation layer, wherein there is a curved, non-planar interface between the non-magnetic insulation layer and the second ferromagnetic material layer; and
an insulation layer between the second ferromagnetic material layer and the top electrode.