CPC H01F 10/3254 (2013.01) [H01F 10/329 (2013.01); H01F 10/3286 (2013.01); H10B 61/00 (2023.02); H10B 61/22 (2023.02); H10N 50/01 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] | 20 Claims |
1. A device, comprising:
a bottom electrode on a conductive structure, the bottom electrode having a curved bottom surface conductively coupled to a curved upper surface of the conductive structure;
a top electrode above the bottom electrode; and
an MTJ (Magnetic Tunnel Junction) structure above the bottom electrode and below the top electrode, wherein the MTJ structure comprises:
a first ferromagnetic material layer above the bottom electrode;
a non-magnetic insulation layer above the first ferromagnetic material layer;
a second ferromagnetic material layer on the non-magnetic insulation layer, wherein there is a curved, non-planar interface between the non-magnetic insulation layer and the second ferromagnetic material layer; and
an insulation layer between the second ferromagnetic material layer and the top electrode.
|