US 11,682,465 B2
Reliable through-silicon vias
Zheng Gong, Toronto (CA); Jiao Wang, Markham (CA); and Zhenhua Yang, Markham (CA)
Assigned to ATI Technologies ULC, Markham (CA)
Filed by ATI Technologies ULC, Markham (CA)
Filed on Sep. 30, 2021, as Appl. No. 17/491,164.
Prior Publication US 2023/0102669 A1, Mar. 30, 2023
Int. Cl. G11C 17/16 (2006.01); G11C 17/18 (2006.01); H01L 23/525 (2006.01); G11C 29/44 (2006.01); G11C 29/02 (2006.01); H01L 23/48 (2006.01); H10B 20/20 (2023.01)
CPC G11C 17/16 (2013.01) [G11C 17/18 (2013.01); G11C 29/027 (2013.01); G11C 29/44 (2013.01); H01L 23/481 (2013.01); H01L 23/5256 (2013.01); H10B 20/20 (2023.02)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit comprising:
a TSV extending from a first surface of a semiconductor substrate to a second surface of said semiconductor substrate and having a first end and a second end; and
a non-volatile repair circuit comprising a one-time programmable (OTP) element having a programming terminal, wherein in response to an application of a fuse voltage to said programming terminal, said OTP element electrically coupling said first end of said TSV to said second end of said TSV.