US 11,681,474 B2
Management of peak current of memory dies in a memory sub-system
Liang Yu, Boise, ID (US); John Paul Aglubat, Boise, ID (US); and Fulvio Rori, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Dec. 27, 2021, as Appl. No. 17/562,590.
Application 17/562,590 is a continuation of application No. 16/871,366, filed on May 11, 2020, granted, now 11,216,219.
Prior Publication US 2022/0121399 A1, Apr. 21, 2022
Int. Cl. G06F 3/00 (2006.01); G06F 3/06 (2006.01); G11C 7/10 (2006.01); G06F 1/14 (2006.01)
CPC G06F 3/0659 (2013.01) [G06F 1/14 (2013.01); G06F 3/0604 (2013.01); G06F 3/0673 (2013.01); G11C 7/1009 (2013.01)] 20 Claims
OG exemplary drawing
 
9. A non-transitory computer readable medium comprising instructions, which when executed by a processing device, cause the processing device to perform operations comprising:
setting, based on a set of training data, a mask flag corresponding to a first memory management operation associated with a current level that exceeds a threshold level;
executing the first memory management operation on a first memory die of a plurality of memory dies;
identifying the mask flag corresponding to the first memory management operation; and
pausing, in view of the mask flag, execution of a second memory management operation on a second memory die during execution of the first memory management operation.