US 11,681,458 B2
Memory device and method reading data
Sunghye Cho, Hwaseong-si (KR); Kijun Lee, Seoul (KR); Sung-Rae Kim, Seoul (KR); Chanki Kim, Suwon-si (KR); Yeonggeol Song, Seoul (KR); Yesin Ryu, Seoul (KR); Jaeyoun Youn, Seoul (KR); and Myungkyu Lee, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Nov. 5, 2020, as Appl. No. 17/90,726.
Claims priority of application No. 10-2020-0050991 (KR), filed on Apr. 27, 2020.
Prior Publication US 2021/0334033 A1, Oct. 28, 2021
Int. Cl. G06F 11/00 (2006.01); G06F 3/06 (2006.01); G06F 11/10 (2006.01); G11C 29/52 (2006.01)
CPC G06F 3/0655 (2013.01) [G06F 3/0619 (2013.01); G06F 3/0673 (2013.01); G06F 11/1048 (2013.01); G11C 29/52 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a memory chip including memory cells; and
a logic chip configured to control the memory chip,
wherein the logic chip reads a codeword including N data units from the memory chip, and perform error correction decoding on the codeword to correct errors in M data units of the N data units, such that when the M data units correspond to a common hardware component specific to a sub-word line which connects memory cells of the memory chip, the logic chip is configured to correct the errors of the M data units by flipping bits of the errors of the M data units, and when the M data units do not correspond to the common hardware component of the memory chip, the logic chip is configured to process the errors of the M data units as an uncorrectable error,
N is a positive integer, and
M is a positive integer less than N,
wherein the logic chip includes:
a first error correction device configured to perform a first error correction encoding on a portion of the codeword to generate a first sub-codeword; and
a second error correction device configured to perform a second error correction encoding on a remaining portion of the codeword to generate a second sub-codeword.