US 11,681,235 B2
System and method for cleaning an EUV mask
Yen-Hui Li, Hsinchu (TW); Cheng-Han Yeh, Hsinchu (TW); and Tzung-Chi Fu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Sep. 17, 2021, as Appl. No. 17/477,969.
Claims priority of provisional application 63/157,376, filed on Mar. 5, 2021.
Prior Publication US 2022/0283521 A1, Sep. 8, 2022
Int. Cl. G03F 7/20 (2006.01); G03F 7/00 (2006.01); H05G 2/00 (2006.01); G03F 1/82 (2012.01)
CPC G03F 7/70925 (2013.01) [G03F 1/82 (2013.01); G03F 7/70033 (2013.01); G03F 7/70916 (2013.01); H05G 2/003 (2013.01)] 20 Claims
OG exemplary drawing
 
16. A reticle cleaning system, comprising:
a cleaning electrode;
a debris capture film supported adjacent to the cleaning electrode and spaced apart from the cleaning electrode;
support pins extending from a surface of the cleaning electrode, wherein the support pins support the debris capture film adjacent to and spaced apart from the cleaning electrode; and
a voltage source configured draw debris from a photolithography reticle to the debris capture film by applying a voltage of alternating polarity to the cleaning electrode when the cleaning electrode is adjacent to the photolithography reticle with the debris capture film positioned between the photolithography reticle and the cleaning electrode.