US 11,680,979 B2
Semiconductor device
Hiroki Hidaka, Tokyo (JP); Keisuke Eguchi, Tokyo (JP); Nobuchika Aoki, Tokyo (JP); and Rei Yoneyama, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
Filed on Apr. 28, 2021, as Appl. No. 17/243,448.
Claims priority of application No. JP2020-142264 (JP), filed on Aug. 26, 2020.
Prior Publication US 2022/0065918 A1, Mar. 3, 2022
Int. Cl. G01R 31/26 (2020.01); G01K 7/01 (2006.01)
CPC G01R 31/2628 (2013.01) [G01K 7/01 (2013.01); G01R 31/2632 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising
a semiconductor chip having a cell region made up of a plurality of cells which include cells corresponding to a transistor part and a diode part, respectively;
a first temperature detection part detecting a temperature of the transistor part; and
a second temperature detection part detecting a temperature of the diode part, wherein
the first temperature detection part is disposed in a cell corresponding to the transistor part,
the second temperature detection part is disposed in a cell corresponding to the diode part, and
the first temperature detection part detects the temperature of the transistor part independent of the second temperature detection part that detects the temperature of the diode part.