US 11,680,958 B2
Particle image velocimetry of extreme ultraviolet lithography systems
En Hao Lai, Hsinchu (TW); Chi Yang, Tainan (TW); Shang-Chieh Chien, New Taipei (TW); Li-Jui Chen, Hsinchu (TW); and Po-Chung Cheng, Longxing Village (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jun. 7, 2021, as Appl. No. 17/340,762.
Application 17/340,762 is a continuation of application No. 16/579,660, filed on Sep. 23, 2019, granted, now 11,029,324, issued on Jun. 8, 2021.
Claims priority of provisional application 62/738,394, filed on Sep. 28, 2018.
Prior Publication US 2021/0294220 A1, Sep. 23, 2021
This patent is subject to a terminal disclaimer.
Int. Cl. G01P 5/20 (2006.01); H05G 2/00 (2006.01); G02B 27/00 (2006.01); G03F 1/42 (2012.01); G03F 7/20 (2006.01); G03F 7/00 (2006.01)
CPC G01P 5/20 (2013.01) [G02B 27/0006 (2013.01); G03F 1/42 (2013.01); G03F 7/20 (2013.01); G03F 7/70025 (2013.01); G03F 7/70033 (2013.01); H05G 2/005 (2013.01); H05G 2/008 (2013.01)] 6 Claims
OG exemplary drawing
 
1. An apparatus for monitoring flow parameters of particles in an extreme ultraviolet light source of an extreme ultraviolet lithography system, comprising:
a droplet detection module configured to detect light reflected and/or scattered from a metal droplet; and
a controller coupled to the droplet detection module and configured to:
perform particle image velocimetry to monitor one or more flow parameters inside the extreme ultraviolet light source.