CPC C30B 29/42 (2013.01) [C30B 11/002 (2013.01); C30B 11/006 (2013.01); H01L 29/20 (2013.01); H01L 29/32 (2013.01); H01L 29/36 (2013.01); H01L 29/30 (2013.01); H01S 5/3013 (2013.01)] | 14 Claims |
1. A semi-insulating gallium arsenide single crystal wafer having a diameter of 6 inches or greater without intentional dopants other than carbon for reducing dislocation density, an etch pit density of less than 1000 cm−2, and a resistivity of 1×107 Ω-cm or more.
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