	US 11,680,312 B2
	Catalyst enhanced seamless ruthenium gap fill
Byunghoon Yoon, Sunnyvale, CA (US); Seshadri Ganguli, Sunnyvale, CA (US); and Xi Cen, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jun. 27, 2022, as Appl. No. 17/850,022.
Application 17/850,022 is a continuation of application No. 17/140,419, filed on Jan. 4, 2021, granted, now 11,401,602.
Claims priority of provisional application 62/993,943, filed on Mar. 24, 2020.
Claims priority of provisional application 62/959,509, filed on Jan. 10, 2020.
Prior Publication US 2022/0333232 A1, Oct. 20, 2022
Int. Cl. C23C 16/02 (2006.01); C23C 16/04 (2006.01); C23C 16/18 (2006.01); C23C 16/455 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01)

CPC C23C 16/02 (2013.01) [C23C 16/04 (2013.01); C23C 16/18 (2013.01); C23C 16/45534 (2013.01); H01L 21/76843 (2013.01); H01L 21/76876 (2013.01); H01L 21/76879 (2013.01); H01L 23/53209 (2013.01); H01L 23/53238 (2013.01); H01L 23/53252 (2013.01); H01L 23/53266 (2013.01)]

20 Claims

1. A method of selectively depositing a film, the method comprising:

selectively depositing the film on a second metal surface over a first dielectric surface of a substrate having a substrate surface comprising the first dielectric surface and the second metal surface by exposing the second metal surface to a precursor of general formula (I): M-L₁(L₂)_y, wherein M is a metal, L₁is an aromatic ligand, L₂is an aliphatic ligand, and y is a number in the range of from 2 to 8, wherein L₂comprises 1,5-hexdiene, 1,4-hexadiene, and less than 5% of 1,3-hexadiene.