US 11,680,311 B2
Method for producing amorphous thin film
Jung Hwan Yoon, Daejeon (KR); Bu Gon Shin, Daejeon (KR); Jeong Ho Park, Daejeon (KR); Eun Kyu Her, Daejeon (KR); So Young Choo, Daejeon (KR); and Yeon Jae Yoo, Daejeon (KR)
Assigned to LG CHEM, LTD., Seoul (KR)
Appl. No. 16/969,809
Filed by LG CHEM, LTD., Seoul (KR)
PCT Filed Jun. 11, 2019, PCT No. PCT/KR2019/006981
§ 371(c)(1), (2) Date Aug. 13, 2020,
PCT Pub. No. WO2019/240455, PCT Pub. Date Dec. 19, 2019.
Claims priority of application No. 10-2018-0068864 (KR), filed on Jun. 15, 2018.
Prior Publication US 2020/0370164 A1, Nov. 26, 2020
Int. Cl. C23C 14/58 (2006.01); C23C 14/14 (2006.01); C23C 14/16 (2006.01); C23C 14/18 (2006.01); C23C 28/02 (2006.01); C23C 26/02 (2006.01); C03C 17/36 (2006.01); B23K 26/082 (2014.01); B23K 26/57 (2014.01); C23C 14/34 (2006.01)
CPC C23C 14/5813 (2013.01) [B23K 26/082 (2015.10); B23K 26/57 (2015.10); C03C 17/3639 (2013.01); C03C 17/3649 (2013.01); C23C 14/14 (2013.01); C23C 14/165 (2013.01); C23C 14/185 (2013.01); C23C 14/34 (2013.01); C23C 26/02 (2013.01); C23C 28/02 (2013.01); C03C 2218/154 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A method for producing an amorphous thin film, the method comprising:
forming on a first substrate a multilayered metal layer by sequentially depositing a first metal layer comprising a first metal, a second metal layer comprising a second metal, and a third metal layer comprising a third metal by sequentially depositing a first metal, a second metal, and a third metal on one surface of the first substrate;
providing one surface of a second substrate to face the multilayered metal layer; and
forming an amorphous layer comprising the first metal, the second metal, and the third metal on the one surface of the second substrate by irradiating the other surface of the first substrate with a laser in a direction from the other surface to the one surface of the first substrate,
wherein the first metal layer includes at least one metal selected from copper and silver, the second metal layer includes at least one metal of samarium and neodymium and the third metal includes at least one metal selected from magnesium, calcium, aluminum, and lanthanum,
wherein the multilayered metal layer has a thickness of 1.5 μm to 3.0 μm,
wherein a difference between the melting point of the first metal layer and the melting point of the second metal layer is 10° C. to 100° C., and a difference between the melting point of the second metal layer and the melting point of the third metal layer is 100° C. to 450° C.,
wherein the depositing of the multilayered metal layer is performed by sputtering, and
wherein the laser irradiation is performed at a scanning speed of 4.5 mm/sec to 20 mm/sec.