US 11,679,469 B2
Chemical mechanical planarization tool
Michael Yen, Hsinchu (TW); Kao-Feng Liao, Hsinchu (TW); Hsin-Ying Ho, Kaohsiung (TW); Chun-Wen Hsiao, Hsinchu (TW); Sheng-Chao Chuang, Hsinchu (TW); Ting-Hsun Chang, Kaohsiung (TW); Fu-Ming Huang, Shengang Township (TW); Chun-Chieh Lin, Hsinchu (TW); Peng-Chung Jangjian, Zhudong Township (TW); Ji James Cui, Hsinchu (TW); Liang-Guang Chen, Hsinchu (TW); Chih Hung Chen, Hsinchu (TW); and Kei-Wei Chen, Tainan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 23, 2019, as Appl. No. 16/550,021.
Prior Publication US 2021/0053180 A1, Feb. 25, 2021
Int. Cl. B24B 37/26 (2012.01); B24B 37/005 (2012.01); B24B 37/24 (2012.01); B24B 37/04 (2012.01)
CPC B24B 37/26 (2013.01) [B24B 37/005 (2013.01); B24B 37/042 (2013.01); B24B 37/24 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A chemical mechanical planarization (CMP) tool comprising:
a platen; and
a polishing pad attached to the platen, wherein a first surface of the polishing pad facing away from the platen comprises a first polishing zone and a second polishing zone, wherein the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, wherein the first polishing zone and the second polishing zone have different surface properties, wherein the first polishing zone and the second polishing zone comprise different materials and have different groove patterns.