| US 7,551,655 B2 | ||
| Laser irradiation apparatus, laser irradiation method and method for manufacturing semiconductor device | ||
| Koichiro Tanaka, Atsugi (Japan); and Yoshiaki Yamamoto, Atsugi (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken (Japan) | ||
| Filed on Nov. 29, 2004, as Appl. No. 10/997,868. | ||
| Claims priority of application No. 2003-403155 (JP), filed on Dec. 02, 2003. | ||
| Prior Publication US 2005/0115930 A1, Jun. 02, 2005 | ||
| Int. Cl. H01S 3/10 (2006.01) | ||
| U.S. Cl. 372—25 [372/28] | 84 Claims |
| 1. A laser irradiation apparatus comprising:
a pulsed laser oscillator configured to supply a laser light;
an optical system configured to introduce the laser light to a processing object,
wherein the pulsed laser introduced to the processing object has a pulse repetition rate of 10 MHz or more, and
wherein an inequality of ct<2nd is satisfied where c is a speed of light in vacuum, n is a refractive index of a substrate
with the processing object formed thereover, d is a thickness of the substrate, and t is a pulse width of the laser light.
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