US 7,551,482 B2
Method for programming with initial programming voltage based on trial
Teruhiko Kamei, Yokohama (Japan); and Yan Li, Milpitas, Calif. (US)
Assigned to SanDisk Corporation, Milpitas, Calif. (US)
Filed on Dec. 27, 2006, as Appl. No. 11/616,647.
Prior Publication US 2008/0158979 A1, Jul. 03, 2008
Int. Cl. G11C 16/04 (2006.01)
U.S. Cl. 365—185.19  [365/185.24; 365/185.03; 365/185.21] 31 Claims
OG exemplary drawing
 
1. A method for programming non-volatile storage, comprising:
performing at least partial programming on a first set of one or more non-volatile storage elements;
classifying said first set of one or more non-volatile storage elements into ranges of threshold voltages after said performing at least partial programming;
dynamically determining and setting a magnitude of a first pulse of a set of programming pulses based on said classifying; and
programming a second set of non-volatile storage elements using said set of programming pulses with said first pulse having said magnitude.