| US 7,551,477 B2 | ||
| Multiple bit line voltages based on distance | ||
| Nima Mokhlesi, Los Gatos, Calif. (US); Dengtao Zhao, Sunnyvale, Calif. (US); Man Mui, Santa Clara, Calif. (US); Hao Nguyen, San Jose, Calif. (US); Seungpil Lee, San Ramon, Calif. (US); Deepak Chandra Sekar, Atlanta, Ga. (US); and Tapan Samaddar, Santa Clara, Calif. (US) | ||
| Assigned to SanDisk Corporation, Milpitas, Calif. (US) | ||
| Filed on Sep. 26, 2007, as Appl. No. 11/861,571. | ||
| Prior Publication US 2009/0080265 A1, Mar. 26, 2009 | ||
| Int. Cl. G11C 11/34 (2006.01) | ||
| U.S. Cl. 365—185 [365/63; 365/230.03] | 49 Claims |
| 1. A non-volatile storage apparatus, comprising:
a plurality of bit lines including a first set of one or more of said bit lines and a second set of one or more of said bit
lines;
non-volatile storage elements including a first group of one or more non-volatile storage elements connected to said first
set of one or more bit lines and a second group of one or more non-volatile storage elements connected to said second set
of one or more bit lines; and
a plurality of bit line interface circuits including a first group of one or more bit line interface circuits connected to
said first set of one or more bit lines and a second group of one or more bit line interface circuits connected to said second
set of one or more bit lines, said first group of one or more bit line interface circuits provide a first signal to said first
set of one or more bit lines based on distance of said first group of one or more non-volatile storage elements from said
first group of one or more bit line interface circuits, said second group of one or more bit line interface circuits provide
a second signal to said second set of one or more bit lines based on distance of said second group of one or more non-volatile
storage elements from said second group of one or more bit line interface circuits.
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