| US 7,551,471 B2 | ||
| Memory element and semiconductor device | ||
| Shunpei Yamazaki, Setagaya (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken (Japan) | ||
| Filed on Apr. 25, 2007, as Appl. No. 11/790,347. | ||
| Claims priority of application No. 2006-125238 (JP), filed on Apr. 28, 2006. | ||
| Prior Publication US 2007/0285959 A1, Dec. 13, 2007 | ||
| Int. Cl. G11C 13/04 (2006.01) | ||
| U.S. Cl. 365—108 [365/129; 365/189.011; 365/189.08] | 13 Claims |
| 1. A memory element comprising:
a first conductive layer;
a second conductive layer;
a layer comprising a compound which can exhibit liquid crystallinity, which is interposed between the first conductive layer
and the second conductive layer; and
a layer comprising an organic compound, which is interposed between the layer comprising a compound which can exhibit liquid
crystallinity and the second conductive layer, wherein:
the layer comprising the compound which can exhibit liquid crystallinity is in contact with the first conductive layer, and
the layer comprising an organic compound is in contact with the layer comprising the compound which can exhibit liquid crystallinity.
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