| US 7,551,004 B2 | ||
| Inverter apparatus with improved gate drive for power MOSFET | ||
| Yoshimi Okazaki, Kanagawa-ken (Japan); Kiyoshi Mori, Kanagawa-ken (Japan); and Hiroyuki Yamazaki, Kanagawa-ken (Japan) | ||
| Assigned to Mitsubishi Heavy Industries, Ltd., Tokyo (Japan) | ||
| Filed on Jan. 24, 2006, as Appl. No. 11/337,595. | ||
| Claims priority of application No. 2005-051267 (JP), filed on Feb. 25, 2005. | ||
| Prior Publication US 2006/0192589 A1, Aug. 31, 2006 | ||
| Int. Cl. H03K 3/00 (2006.01) | ||
| U.S. Cl. 327—108 [527/112; 527/427] | 7 Claims |
| 1. An inverter apparatus, comprising:
a first power MOSFET having a source/drain connected to an output terminal;
a second power MOSFET having a source/drain connected to said output terminal;
a first gate drive circuit driving a gate of said first power MOSFET; and
a second gate drive circuit driving a gate of said second power MOSFET; wherein, said first gate drive circuit includes,
a first discharging path connected with said gate of said first power MOSFET, said first discharging path including a set
of first serially-connected diodes which are forward-connected in a direction of a first discharge current from said gate
of said first power MOSFET,
said second gate drive circuit includes,
a second discharging path connected with said gate of said second power MOSFET, said second discharging path comprising a
set of second serially-connected diodes which are forward-connected in a direction of a second discharge current from said
gate of said second power MOSFET, and
during pull-down of said gate of said first power MOSFET followed by pull-up of said gate of said second power MOSFET, said
first gate drive circuit drives said gate of said first power MOSFET so that when said second gate drive circuit drives a
gate-source voltage of said second power MOSFET to a threshold voltage of said second power MOSFET, a gate-source voltage
of said first power MOSFET is always higher than 0V and lower than a threshold voltage of said first power MOSFET.
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