	US 7,550,819 B2
	Metal thin-film resistance element on an insulation film
Kimihiko Yamashita, Hyogo (Japan)
Assigned to Ricoh Company, Ltd., Tokyo (Japan)
Filed on Feb. 18, 2005, as Appl. No. 11/61,548.
Claims priority of application No. 2004-042782 (JP), filed on Feb. 19, 2004.
Prior Publication US 2005/0202219 A1, Sep. 15, 2005
Int. Cl. H01L 29/00 (2006.01)

U.S. Cl. 257—536 [257/E21.004; 257/E21.006]

9 Claims

1. A semiconductor device having a metal thin-film resistance on an insulation film, comprising:

first, second, and third contact holes formed in said insulation film;

a first conductive plug formed in said first contact hole;

a second conductive plug formed in said second contact hole;

a third conductive plug formed in said third contact hole;

a metal thin-film resistance formed on said first and second conductive plugs and on said insulation film; and

a metal interconnection pattern formed on said third conductive plug and said insulation film; and

wherein said first conductive plug comprises a first conductive material formed on an inner wall surface of said first contact hole and a second conductive material formed on said first conductive material in said first contact hole, said second conductive plug comprises said first conductive material formed on an inner wall surface of said second contact hole and said second conductive material formed on said first conductive material in said second contact hole,

a top edge of said first conductive material in said first contact hole is formed with a separation from a top edge of said first contact hole and a top surface of said second conductive material,

an outer peripheral part of said top surface of said second conductive material in said first contact hole and said top edge of said first contact hole forming a tapered surface,

wherein there is formed a buried material in said first contact hole in a space formed on said first conductive material between said inner wall of said first contact hole and said second conductive material in said first contact hole, such that said buried material contains at least a material of said insulation film, said first conductive material and Ar as a component thereof.