| US 7,550,792 B2 | ||
| Solid-state imaging device and manufacturing method thereof | ||
| Masaaki Ogawa, Kanagawa-ken (Japan); Takashi Doi, Kanagawa-ken (Japan); and Toshihiko Kitamura, Kanagawa-ken (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Jul. 16, 2007, as Appl. No. 11/778,314. | ||
| Claims priority of application No. 2006-200920 (JP), filed on Jul. 24, 2006. | ||
| Prior Publication US 2008/0210985 A1, Sep. 04, 2008 | ||
| Int. Cl. H01L 27/148 (2006.01); H01L 31/101 (2006.01) | ||
| U.S. Cl. 257—233 [257/292; 257/461; 257/E31.032; 257/E31.054] | 12 Claims |
| 1. A solid-state imaging device, comprising:
a substrate having a region of a first conductivity type on at least a portion of a surface thereof;
a region of a second conductivity type formed on at least a portion of a surface of the region of the first conductivity type;
a multilayer wiring layer formed on the substrate; and
a layer of the second conductivity type formed directly above the region of the second conductivity type in the multilayer
wiring layer, connected to the region of the second conductivity type;
a concentration of impurities in the layer of the second conductivity type being lower with decreasing proximity to the region
of the second conductivity type.
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