| US 7,550,769 B2 | ||
| Light emitting element, light emitting device and semiconductor device | ||
| Shunpei Yamazaki, Tokyo (Japan); and Kengo Akimoto, Kanagawa (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-Ken (Japan) | ||
| Filed on Jun. 03, 2005, as Appl. No. 11/143,673. | ||
| Claims priority of application No. 2004-174852 (JP), filed on Jun. 11, 2004. | ||
| Prior Publication US 2005/0274949 A1, Dec. 15, 2005 | ||
| Int. Cl. H01L 29/04 (2006.01) | ||
| U.S. Cl. 257—72 [257/83; 257/E51.019] | 34 Claims |
| 1. A light emitting device comprising:
a substrate;
a transistor formed over the substrate;
a wiring electrically connected to the transistor;
an interlayer insulating layer formed over the wiring and comprising an opening; and
a light emitting element formed over the interlayer insulating layer comprising:
a first conductive layer comprising titanium oxide;
an organic layer over the first conductive layer;
a light emitting layer over the organic layer; and
a second conductive layer over the light emitting layer,
wherein the organic layer is in contact with the first conductive layer,
wherein the first conductive layer is electrically connected to the transistor through the wiring,
wherein the first conductive layer transmits visible light,
wherein an upper surface of the first conductive layer has a hydrophilic property,
wherein the second conductive layer reflects visible light, and
wherein light from the light emitting layer is emitted through the substrate.
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