| US 7,550,665 B2 | ||
| Stacked photoelectric converter | ||
| Toshiaki Sasaki, Otsu (Japan); Yohei Koi, Otsu (Japan); Kenji Yamamoto, Kobe (Japan); Masashi Yoshimi, Kobe (Japan); and Mitsuru Ichikawa, Otsu (Japan) | ||
| Assigned to Kaneka Corporation, Osaka (Japan) | ||
| Appl. No. 10/530,283 PCT Filed Jul. 15, 2004, PCT No. PCT/JP2004/010115 § 371(c)(1), (2), (4) Date Apr. 04, 2005, PCT Pub. No. WO2005/011001, PCT Pub. Date Feb. 03, 2005. |
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| Claims priority of application No. 2003-279493 (JP), filed on Jul. 24, 2003; application No. 2003-367535 (JP), filed on Oct. 28, 2003; application No. 2003-367536 (JP), filed on Oct. 28, 2003; and application No. 2004-091897 (JP), filed on Mar. 26, 2004. | ||
| Prior Publication US 2006/0043517 A1, Mar. 02, 2006 | ||
| Int. Cl. H01L 31/00 (2006.01); H02N 6/00 (2006.01) | ||
| U.S. Cl. 136—246 [136/261; 136/258] | 15 Claims |
| 1. A stacked-layer type photoelectric conversion device comprising a plurality of photoelectric conversion units stacked on
a substrate, each of which includes a one conductivity-type layer, a photoelectric conversion layer of substantially intrinsic
semiconductor, and an opposite conductivity-type layer in this order from a light incident side, wherein
at least one of said opposite conductivity-type layer in a front photoelectric conversion unit arranged relatively closer
to the light incident side and said one conductivity-type layer in a back photoelectric conversion unit arranged adjacent
to said front photoelectric conversion unit includes a silicon composite layer at least in a part thereof, and
said silicon composite layer has a thickness of more than 20 nm and less than 130 nm and an oxygen concentration of more than
25 atomic % and less than 60 atomic %, and includes silicon-rich phase parts in an amorphous alloy phase of silicon and oxygen.
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