| US 7,550,354 B2 | ||
| Nanoelectromechanical transistors and methods of forming same | ||
| Huilong Zhu, Poughkeepsie, N.Y. (US) | ||
| Assigned to International Business Machines Corporation, Armonk, N.Y. (US) | ||
| Filed on Jul. 11, 2007, as Appl. No. 11/776,160. | ||
| Prior Publication US 2009/0017572 A1, Jan. 15, 2009 | ||
| Int. Cl. H01L 21/336 (2006.01) | ||
| U.S. Cl. 438—289 [438/197; 438/292; 438/775; 257/E21.17; 257/E21.218; 257/E21.267; 257/E21.304; 257/E21.547] | 14 Claims |
| 1. A method of forming a nanoelectromechanical transistor (NEMT), the method comprising:
providing an insulative substrate having a metal gate layer over the insulative substrate and at least one insulator layer
over the metal gate layer;
forming a first opening and a second opening through the at least one first insulator layer, leaving a pedestal area therebetween;
forming a source region within one of the first and second openings adjacent to the pedestal area and a drain region within
the other of the first and second openings adjacent to the pedestal area;
forming a metal channel member; and
forming a nanotube member insulatively coupled to the metal channel member,
wherein, in response to an electrical potential applied to the metal gate and the nanotube member, the nanotube member is
electromechanically deflectable between an off state and an on state, the on state placing the channel member in electrical
connection with the source region and the drain region to form a current path.
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