| US 7,550,345 B2 | ||
| Methods of forming hafnium-containing materials | ||
| Cem Basceri, Boise, Id. (US); F. Daniel Gealy, Kuna, Id. (US); and Gurtej S. Sandhu, Boise, Id. (US) | ||
| Assigned to Micron Technology, Inc., Boise, Id. (US) | ||
| Filed on Jul. 11, 2006, as Appl. No. 11/485,593. | ||
| Application 11/485593 is a division of application No. 10/928547, filed on Aug. 26, 2004, granted, now 7,217,630. | ||
| Application 10/928547 is a continuation of application No. 10/613191, filed on Jul. 03, 2003, granted, now 6,785,120. | ||
| Prior Publication US 2006/0252221 A1, Nov. 09, 2006 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. H01L 21/20 (2006.01) | ||
| U.S. Cl. 438—240 [438/287; 438/386; 438/785] | 10 Claims |
| 1. A method of forming hafnium oxide, comprising:
providing a semiconductor substrate;
forming a first hafnium oxide-containing material from a first hafnium-containing precursor utilizing a first temperature;
and
forming a second hafnium oxide-containing material directly against the first hafnium oxide-containing material from a second
hafnium-containing precursor utilizing a second temperature which is less than the first temperature.
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