| US 7,550,325 B2 | ||
| Method of manufacturing an active matrix display device | ||
| Jun Koyama, Kanagawa (Japan); Hisashi Ohtani, Kanagawa (Japan); Yasushi Ogata, Kanagawa (Japan); and Shunpei Yamazaki, Tokyo (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken (Japan) | ||
| Filed on Jul. 17, 2003, as Appl. No. 10/620,565. | ||
| Application 10/620565 is a division of application No. 09/652652, filed on Aug. 31, 2000, granted, now 6,630,687. | ||
| Application 09/652652 is a continuation of application No. 08/996357, filed on Dec. 22, 1997, granted, now 6,124,604. | ||
| Claims priority of application No. 8-358956 (JP), filed on Dec. 30, 1996. | ||
| Prior Publication US 2004/0084675 A1, May 06, 2004 | ||
| Int. Cl. H01L 21/84 (2006.01); H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—149 [438/161; 438/622] | 57 Claims |
| 1. A method of manufacturing a semiconductor device comprising:
forming a first wiring on a same layer as a source electrode and a drain electrode over a substrate;
forming an insulating film over the first wiring;
forming a plurality of contact holes in the insulating film;
forming a second wiring over the insulating film; and
electrically connecting a flat cable to the second wiring to supply signals to the semiconductor device through the second
wiring,
wherein the first wiring is in contact with the second wiring via the plurality of contact holes, and
wherein the first wiring extends in parallel with the second wiring.
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