| US 7,550,250 B2 | ||
| Positive resist composition and pattern forming method using the same | ||
| Hiromi Kanda, Haibara-gun (Japan) | ||
| Assigned to FUJIFILM Corporation, Tokyo (Japan) | ||
| Filed on Dec. 27, 2006, as Appl. No. 11/645,780. | ||
| Claims priority of application No. 2005-375556 (JP), filed on Dec. 27, 2005. | ||
| Prior Publication US 2007/0148595 A1, Jun. 28, 2007 | ||
| Int. Cl. G03F 7/00 (2006.01); G03F 7/004 (2006.01) | ||
| U.S. Cl. 430—270.1 [430/905; 430/913; 430/311] | 17 Claims |
| 1. A positive resist composition, which comprises:
(A) a resin having a monocyclic or polycyclic alicyclic hydrocarbon structure, of which solubility in an alkali developer
increases under an action of an acid;
(B) a compound capable of generating an acid upon irradiation with actinic rays or radiation;
(C) a resin having a repeating unit represented by formula (C) and not containing either a silicon atom or a fluorine atom;
and
(D) a solvent,
wherein a content of the resin as the component (C) is from 0.1 to 20 mass % based on a solid content of the positive resist
composition:
 wherein X1, X2 and X3 each independently represents a hydrogen atom, an alkyl group or a halogen atom;
L represents a single bond or a divalent linking group; and
Rp1 represents an acid-decomposable group.
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