US 7,550,044 B2
Hard mask structure for patterning of materials
Michael C. Gaidis, Wappingers Falls, N.Y. (US); Sivananda K. Kanakasabapathy, Hopewell Junction, N.Y. (US); and Eugene J. O'Sullivan, Nyack, N.Y. (US)
Assigned to International Business Machines Corporation, Armonk, N.Y. (US)
Filed on Apr. 08, 2008, as Appl. No. 12/99,441.
Application 12/099441 is a division of application No. 11/177008, filed on Jul. 08, 2005, granted, now 7,381,343, filed on Jun. 03, 2008.
Prior Publication US 2008/0185101 A1, Aug. 07, 2008
Int. Cl. B05C 1/00 (2006.01); B44C 1/22 (2006.01)
U.S. Cl. 118—213  [216/41; 216/47] 12 Claims
OG exemplary drawing
 
1. A hard mask structure comprising:
at least one hard mask component configured to impart on the hard mask structure a plurality of layers, each of the plurality of layers of the hard mask structure being electrically conductive, at least a first layer of the plurality of layers of the hard mask structure having at least a second layer of the plurality of layers of the hard mask structure disposed thereabove, the first layer having one or more lateral dimensions that are greater than one or more lateral dimensions of the second layer, such that at least one portion of the first layer extends out laterally a substantial distance beyond the second layer, and the second layer having one or more vertical dimensions that are greater than one or more vertical dimensions of the first layer.