| US 7,548,569 B2 | ||
| High-power optically end-pumped external-cavity semiconductor laser | ||
| Gi-bum Kim, Yongin-si (Korea, Republic of); Soo-haeng Cho, Yongin-si (Korea, Republic of); and Taek Kim, Seongnam-si (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do (Korea, Republic of) | ||
| Filed on Sep. 22, 2006, as Appl. No. 11/525,093. | ||
| Claims priority of application No. 10-2006-0042831 (KR), filed on May 12, 2006. | ||
| Prior Publication US 2007/0263686 A1, Nov. 15, 2007 | ||
| Int. Cl. H01S 3/04 (2006.01); H01S 3/08 (2006.01); H01S 3/00 (2006.01) | ||
| U.S. Cl. 372—36 [372/34; 372/98; 372/99; 372/101; 372/109] | 20 Claims |
| 1. A high-power optically end-pumped external-cavity semiconductor laser comprising:
a laser chip comprising an active layer and a distributed Bragg reflector (DBR) for emitting light of a fundamental wavelength;
an external mirror spaced apart from a first surface of the laser chip and forming a cavity resonator with the DBR;
a second harmonic generation (SHG) crystal positioned between the external mirror and the laser chip; and
a micro-lens integrated heat sink dissipating heat generated by the laser chip and bonded to a second surface of the laser
chip to focus a pumping beam to be incident on the second surface of the laser chip.
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