| US 7,548,474 B2 | ||
| Device for reading out a memory cell including a regulating circuit with parallel switching elements, and method | ||
| Edvin Paparisto, München (Germany); and Stephan Rogl, Landshut (Germany) | ||
| Assigned to Infineon Technologies AG, Munich (Germany) | ||
| Filed on Jun. 01, 2006, as Appl. No. 11/444,696. | ||
| Claims priority of application No. 10 2005 025 149 (DE), filed on Jun. 01, 2005. | ||
| Prior Publication US 2006/0280008 A1, Dec. 14, 2006 | ||
| Int. Cl. G11C 7/00 (2006.01) | ||
| U.S. Cl. 365—203 | 23 Claims |
| 1. A device to be used for reading out a memory cell, comprising:
a first circuit and a second circuit for regulating a voltage present at a line that is adapted to be connected with the memory
cell to a predetermined value;
wherein said first circuit comprises a switching element; and
wherein said first circuit is configured such that said switching element is switched on during a first regulating phase and
is switched off during a second regulating phase, and
wherein, in parallel to said switching element of said first circuit, there is connected a further switching element that
is connected or adapted to be connected with a memory cell state evaluation circuit.
|