| US 7,548,467 B2 | ||
| Bias voltage generator and method generating bias voltage for semiconductor memory device | ||
| Hye-Jin Kim, Yongin-si (Korea, Republic of); Kwang-Jin Lee, Hwaseong-si (Korea, Republic of); Woo-Yeong Cho, Suwon-si (Korea, Republic of); and Mu-Hui Park, Seocho-gu (Korea, Republic of) | ||
| Assigned to Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do (Korea, Republic of) | ||
| Filed on Dec. 13, 2007, as Appl. No. 11/955,562. | ||
| Claims priority of application No. 10-2006-0136115 (KR), filed on Dec. 28, 2006; and application No. 10-2007-0003123 (KR), filed on Jan. 11, 2007. | ||
| Prior Publication US 2008/0159017 A1, Jul. 03, 2008 | ||
| Int. Cl. G11C 5/14 (2006.01) | ||
| U.S. Cl. 365—189.09 [365/148] | 20 Claims |
| 1. A bias voltage generator generating a bias voltage to control a sensing current supplied to a memory cell, comprising:
a circuit providing the bias voltage in response to an applied input voltage, such that the non-zero slope of the bias voltage
relative to the input voltage is different for at least two successive sections of the input voltage distinguished different
voltage levels.
|