| 1. A method of programming a nonvolatile memory device comprising a plurality of n-valued nonvolatile memory cells arranged
in a matrix, wherein n is a natural number greater than or equal to two (2), the method comprising:
programming i-valued data to three or more memory cells contiguously arranged along a first direction of the matrix before
programming (i+1)-valued data to any of the three or more memory cells, wherein i is less than n, and wherein the three or
more memory cells are programmed during three or more respectively distinct program periods; and,
after programming the i-valued data to the three or more memory cells, programming (i+1)-valued data to a particular memory
cell among the three or more memory cells.
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