| US 7,548,283 B2 | ||
| Active matrix structure for display screen and screen comprising one such matrix | ||
| Thierry Kretz, Saint Jean de Moirans (France); and Hugues Lebrun, Coublevie (France) | ||
| Assigned to Thales, Neuilly-sur-Seine (France) | ||
| Appl. No. 10/537,348 PCT Filed Dec. 02, 2003, PCT No. PCT/EP03/50918 § 371(c)(1), (2), (4) Date Jan. 04, 2006, PCT Pub. No. WO2004/051356, PCT Pub. Date Jun. 17, 2004. |
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| Claims priority of application No. 02 15484 (FR), filed on Dec. 03, 2002. | ||
| Prior Publication US 2006/0146209 A1, Jul. 06, 2006 | ||
| Int. Cl. G02F 1/1343 (2006.01) | ||
| U.S. Cl. 349—39 [349/43; 349/38] | 18 Claims |
| 1. An active matrix structure for a display screen, formed on a transparent substrate, comprising:
pixel electrodes arranged in rows and columns;
a switching device associated with each electrode, and corresponding row selection lines, each selection line being disposed
between two rows of successive pixel electrodes, said selection lines and electrode pixels being realized on a different level
of a structure;
under each row of pixel electrodes, a bus made of conducting and transparent material, substantially with a same width as
said row, produced on a level of the structure separated from a level of the selection lines and from a level of the pixel
electrodes by at least one insulation layer and connected to the selection line of a previous row of pixel electrodes, said
bus forming a storage capacitor with each pixel electrode of said row; and
a channel level of the transistors is situated between a level of the storage capacitor bus and that of the row selection
lines forming gate of the transistors.
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