| US 7,547,934 B2 | ||
| Magneto-resistive effect element and magnetic memory | ||
| Yoshiaki Saito, Kanagawa-Ken (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Sep. 27, 2007, as Appl. No. 11/862,966. | ||
| Application 11/862966 is a division of application No. 10/886547, filed on Jul. 09, 2004, granted, now 7,307,302. | ||
| Claims priority of application No. 2003-194513 (JP), filed on Jul. 09, 2003. | ||
| Prior Publication US 2008/0019058 A1, Jan. 24, 2008 | ||
| Int. Cl. H01L 27/108 (2006.01) | ||
| U.S. Cl. 257—295 [257/296; 257/422] | 14 Claims |
| 1. A magnetic memory comprising at least a memory cell, the memory cell including a magneto-resistive effect element as a
memory element, the magneto-resistive effect element including:
a magnetization-pinned layer comprising a magnetic film having a first surface, a second surface opposite to the first surface,
and third surfaces different from the first and second surfaces, the magnetic film having a spin moment oriented in a direction
perpendicular to the first surface and pinned in the direction;
a magnetic recording layer provided to face the first surface and having a spin moment oriented in a direction perpendicular
to the first surface, a direction of the spin moment of the magnetic recording layer being parallel or antiparallel to that
of the magnetization-pinned layer;
a nonmagnetic layer formed between the magnetization-pinned layer and the magnetic recording layer; and
an anti-ferromagnetic film formed on at least the third surfaces of the magnetization-pinned layer and being exchange-coupled
to the magnetization-pinned layer so that the spin moment of the magnetic film is oriented in the direction perpendicular
to the first surface.
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