| US 7,547,921 B2 | ||
| Semiconductor chip for optoelectronics | ||
| Stefan Illek, Donaustauf (Germany); Klaus Streubel, Laaber (Germany); Walter Wegleiter, Nittendorf (Germany); Andreas Ploessl, Regensburg (Germany); and Ralph Wirth, Pettendorf-Adlersberg (Germany) | ||
| Assigned to Osram Opto Semiconductors GmbH, Regensburg (Germany) | ||
| Filed on Nov. 30, 2005, as Appl. No. 11/292,389. | ||
| Application 10/346605 is a division of application No. 09/750004, filed on Dec. 27, 2000, abandoned. | ||
| Application 11/292389 is a continuation in part of application No. 10/346605, filed on Jan. 17, 2003, granted, now 6,995,030. | ||
| Claims priority of application No. 100 38 671 (DE), filed on Aug. 08, 2000; and application No. 100 59 532 (DE), filed on Nov. 30, 2000. | ||
| Prior Publication US 2006/0145164 A1, Jul. 06, 2006 | ||
| Int. Cl. H01L 27/15 (2006.01) | ||
| U.S. Cl. 257—79 | 31 Claims |
| 1. A semiconductor chip for optoelectronics, comprising:
an active thin-film layer in which a photon-emitting active zone is fashioned;
a carrier member for the thin-film layer that is arranged at a side of the thin-film layer facing away from an emission direction
of the chip and is connected thereto; and
a plurality of mesas formed at a boundary between said carrier member and said active thin-film layer, each of said plural
mesas protruding from a second part of the thin-film layer and being formed by at least one cavity formed in the active thin-film
layer proceeding from the carrier member, and said plural mesas being in a single light emitting diode and being connected
with each other by the second part of said thin-film layer, said active zone being arranged in the second part of the thin-film
layer.
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