providing a hybrid orientated semiconductor substrate comprising a first active area having a first semiconductor surface layer of a first crystallographic orientation located on a surface of a buried insulating material and a second active area having a second semiconductor surface layer of a second crystallographic orientation located within said hybrid orientated semiconductor substrate, wherein said first and second crystallographic orientations are different;

forming a trench isolation region located between said first and second active areas, said trench isolation region is filled with a trench dielectric material;

forming a lithographically defined opening within said trench isolation region in a region that laterally abuts said second semiconductor surface layer to expose sidewalls of said second semiconductor surface layer;

laterally etching at least an upper portion of a buffer layer that is present directly beneath said second semiconductor surface layer forming a cavity which extends below said second semiconductor surface layer; and

filling said cavity and the lithographically defined opening within said trench isolation region with a dielectric material that has a lower stress value than said trench dielectric material.