US 7,547,625 B2
Methods for bonding and micro-electronic devices produced according to such methods
Eric Beyne, Leuven (Belgium); and Riet Labie, Kessel-Lo (Belgium)
Assigned to Interuniversitair Microelektronica Centrum vzw (IMEC), Leuven (Belgium)
Filed on Jun. 07, 2006, as Appl. No. 11/448,598.
Claims priority of provisional application 60/688994, filed on Jun. 08, 2005.
Prior Publication US 2006/0292824 A1, Dec. 28, 2006
Int. Cl. H01L 21/44 (2006.01)
U.S. Cl. 438—613  [438/615; 438/612; 438/614] 9 Claims
OG exemplary drawing
 
1. A method of bonding two elements comprising:
producing on a first element a first micropattern, comprising a first metal layer;
producing on a second element a second micropattern, comprising a second metal layer;
applying on the first micropattern and/or on the second micropattern a layer of solder material;
producing on at least one of the elements a patterned non-conductive adhesive layer around the micropattern on the element;
joining the first micropattern and the second micropattern by a thermocompression or reflow process;
wherein the producing of an adhesive layer is performed before the joining such that the first and second elements are secured to each other by the adhesive layer after joining,
wherein the first and second micropatterns are formed from cobalt (Co), and wherein the solder layer comprises a tin (Sn) layer, wherein the sum of the thicknesses of the first and second micropatterns is at least equal to a value d, determined as

OG Complex Work Unit Drawing
wherein x represents the thickness of the solder layer or sum of the thicknesses of the solder layers, ρrepresents the density of the material and:

OG Complex Work Unit Drawing
and wherein at% is derived from the stoechiometric composition of the final intermetallic compound, and m is the atomic mass.